| PART |
Description |
Maker |
| TYN1004 TYN804 |
V(drm): 1000V; silicon controlled rectifier (SCR)
V(drm): 800V; silicon controlled rectifier (SCR)
|
SGS Thomson Microelectronics
|
| 2N4441 |
SCR, V(DRM) = 50V TO 99.9V
|
New Jersey Semi-Conductor Products, Inc.
|
| 2N6172 |
SCR, V(DRM) =200V TO 299.9V
|
New Jersey Semi-Conductor Products, Inc.
|
| Q6025R5 Q7015R5 Q5006L4 |
TRIAC|500V V(DRM)|6A I(T)RMS|TO-220AB 可控硅| 500V五（DRM）的| 6A条口（T）的有效值| TO - 220AB现有
TRIAC|700V V(DRM)|15A I(T)RMS|TO-220 可控硅| 700V的五（DRM）的| 15A条口（T）的有效值|20
TRIAC|600VV(DRM)|25AI(T)RMS|TO-200AB
|
Motorola Mobility Holdings, Inc.
|
| S0802XH S0802NH |
I(t): 8A; V(drm): 800V; sensitive gate SCR. For general purpose applications
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| TLS106-4 TLS106 |
SENSITIVE GATE SCR
SILICON CONTROLLED RECTIFIER,400V V(DRM),4A I(T),TO-221VAR
|
STMicroelectronics
Toshiba Semiconductor
|
| BT151S BT151S-500L BT151S-500R BT151S-650L BT151S- |
SCR
Thyristors - I<sub>GT</sub>: 15 mA; I<sub>T</sub> (R<sub>MS</sub>): 12 A; V<sub>DRM</sub>: 800 V; Package: SOT428 (DPAK); Container: Tape reel smd
|
NXP Semiconductors N.V.
|
| TW5N04FZ TW5N04FZ3 TW5N04FZ1 TW7N04FZ2 TW7N08FZ2 T |
TRIAC|400V V(DRM)|5A I(T)RMS|TO-220
TRIAC|400V V(DRM)|8A I(T)RMS|TO-220 可控硅| 400V五（DRM）的| 8A条口（T）的有效值|20
TRIAC|800V V(DRM)|8A I(T)RMS|TO-220 可控硅| 800V的五（DRM）的| 8A条口（T）的有效值|20
TRIAC|800V V(DRM)|12A I(T)RMS|TO-220 可控硅| 800V的五（DRM）的| 12A条口（T）的有效值|20
TRIAC|500V V(DRM)|25A I(T)RMS|TO-103VARM6 可控硅| 500V五（DRM）的| 25A条口（T）的有效值|03VARM6
|
DB Lectro, Inc.
Intersil, Corp.
|
| TXN05 TXN100 TYN40 TYN80K TXN058 TXN05G TXN05K TXN |
THYRISTORS
V(drm): 50V; 8A; glass passivated thyristor
V(drm): 1000V; 8A; glass passivated thyristor
V(drm): 100V; 8A; glass passivated thyristor
V(drm): 200V; 8A; glass passivated thyristor
V(drm): 400V; 8A; glass passivated thyristor
V(drm): 600V; 8A; glass passivated thyristor
V(drm): 800V; 8A; glass passivated thyristor
|
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| DTB12E DTB8F DTB12G DTB16G DTA16G DTB16F DTB8E DTB |
TRIAC|500V V(DRM)|10A I(T)RMS|TO-220 可控硅| 500V五（DRM）的| 10A条口（T）的有效值|20
TRIAC|200V V(DRM)|10A I(T)RMS|TO-220 可控硅| 200伏五（DRM）的| 10A条口（T）的有效值|20
TRIAC|400V V(DRM)|8A I(T)RMS|TO-220 可控硅| 400V五（DRM）的| 8A条口（T）的有效值|20
THYRISTOR MODULE|TRIAC 晶闸管模块|可控
TRIAC|600V V(DRM)|16A I(T)RMS|TO-220
TRIAC|600V V(DRM)|12A I(T)RMS|TO-220
TRIAC|500V V(DRM)|8A I(T)RMS|TO-220
TRIAC|400V V(DRM)|12A I(T)RMS|TO-220
|
Won-Top Electronics Co., Ltd.
ON Semiconductor
|
| FG1800BH40 FG1800BH50 FG1000AL20 |
THYRISTOR|GTO|2KV V(DRM)|TO-200AF
THYRISTOR|GTO|2.5KV V(DRM)|TO-200AF
THYRISTOR|GTO|1KV V(DRM)|TO-200VAR56 晶闸管| GTO的| 1KV交五（DRM）的|00VAR56
|
Black Box, Corp.
|
